California Transparency in Supply Chains Act Disclosure, Modern Slavery and Human Trafficking Statement. Next, before the porous base material is heated to become a transparent glass, first and second treatment steps described later are performed. The broadening of the bands during densification, and thus the Si-O-Si bond-angle decrease, may be due to either the distortion of SiO4 tetrahedra or a widening of the distribution of rotational arrangements between connected SiO4 tetrahedra causing a distortion of the electronic structure. The transmittance measurement at 157 nm was performed using a vacuum ultraviolet spectrophotometer to measure the apparent transmittance T including the reflection loss of a precisely polished sample having a thickness of 10 mm, and the theoretical transmittance at 157 nm (the reflection loss was subtracted). On the other hand, no significant decrease in transmittance was observed for the excimer grade specimen. [0059] contrast on line width roughness (LER) for dry 193 nm lithography 3 . Further, since the Si—OH structure itself has an absorption band in the vacuum ultraviolet region, the transmittance at 157 nm is deteriorated. In this contribution we will summarise the recent progress of our VUV excimer laser programme on the ArF and F2 laser. This is the first step, Cl20.1 l / min and O20.4 l / min and He 7.01 l / min (volume ratio Cl2: O2: He = 1: 4: 70) under a mixed gas atmosphere, heated at 1100 ° C. and lowered at 2.5 mm / min for dehydration treatment. The glass of Comparative Example 3 is Cl2The dehydration process was performed using gas.4SiF at the time of transparent vitrification by fluorine dope with small flow rate of gas, low temperature and descending rate during heating under large conditions4The gas flow rate was also low. reusing waste heat during processing or shaping, Improving the yield, e-g- reduction of reject rates, コーニング インコーポレイテッド, Optical member of silica glass for transmitting fluorine excimer laser radiation and method for producing the same, Quartz glass optical element for transmitting fluorine-excimer laser radiation and method for its production, Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass, Projection lithography photomask blanks, preforms and method of making, Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass, Projection lithography photomasks and methods of making, Vacuum ultraviolet transmitting direct deposit vitrified silicon oxyfluoride lithography glass photomask blanks, Synthetic quartz glass optical material and optical member for F2 excimer laser, Oxygen doping of silicon oxyfluoride glass, Annealing furnace and method for producing optical synthetic quartz glass, Exposure apparatus and method of exposing a pattern, Producing quartz glass material used in microlithography-projection devices comprises minimizing the amount of peroxide defects in the material, SILICA GLASS CONTAINING TiO2 AND OPTICAL MEMBER FOR EUV LITHOGRAPHY, Fluorine-doped quartz glass article and manufacturing method thereof, Liquid-soaked lens system and projecting exposure apparatus as well as component manufacturing method, Synthetic quartz glass for optical members and method for producing the same, Synthetic quartz glass with radial distribution of fast axes of birefringence and process for producing the same, Synthetic quartz glass with fast axes of birefringence distributed in concentric-circle tangent directions and process for producing the same, Synthetic quartz glass and manufacturing method thereof, Process for the preparation of a blank made of titanium- and fluorine-doped, high-siliceous glass, Artificial quartz member and optical element using same, Transparent quartz glass and process for its production, Manufacturing method of synthetic quartz glass member, Method for producing silica glass for use with light in a vacuum ultraviolet wavelength range, Synthetic quartz glass and method for production thereof, Projection lithography photomask blanks, preforms and methods of making, UV light-permeable glass and article comprising the same, Silica glass containing tio2 and process for its production, Optical members and blanks of synthetic silica glass and method for their production, Silica glass containing tio2 and optical material for euv lithography, High transmission synthetic silica glass and method of making same, Fused silica having low OH, OD levels and method of making, Synthetic quartz glass optical member for excimer laser and production thereof, Silica glass containing TiO2 and process for its production, A quartz glass doped with titanium dioxide, a member for EUV micrographs, a mask for a EUV micrograph mask, and a quartz glass doped with titanium dioxide, Photolithography method, photolithography mask blanks, and method of making, Holder made from quartz glass for the processing of semiconductor wafers and method for production of the holder, Titania-doped quartz glass member and making method, Very low CTE slope doped silica-titania glass, Synthetic silica glass used with uv-rays and method producing the same, Silica glass containing TiO2 and method for producing the same, High refractive index homogeneity quartz glass and method of making same, Process for producing silica glass containing tio2, and optical material for euv lithography employing silica glass containing tio2, Deuteroxyl-doped silica glass, optical member and lithographic system comprising same and method of making same, Quartz glass blank for an optical component, and manufacturing procedure and use thereof, Silica glass optical material for excimer laser and excimer lamp, and method for producing the same, Silica glass, optical member including the same, and method for producing the same, Optical component of quartz glass, method for producing the optical component, and use thereof, Written request for application examination, Written decision to grant a patent or to grant a registration (utility model), First payment of annual fees (during grant procedure), Renewal fee payment (event date is renewal date of database), Certificate of patent or registration of utility model, Cancellation because of completion of term. [Example 2] All F-version laser are fitted with an external optics coupling for connection to a Nitrogen or inert gas purge system. Si-OH OH stretching vibration (wave number 3670 cm) measured by Fourier transform infrared absorption spectrum-1). Thereafter, the same homogenization treatment and thermal annealing treatment as in Example 1 were performed. [0029] … Silica glass obtained by thermal and mechanical homogenization by such a method has a uniform fluorine concentration and a flat refractive index distribution, which eliminates striae.2It is suitable as an optical member for excimer laser. 1 is a table showing physical properties of examples and comparative examples of the present invention. [0058] As a measuring instrument, a birefringence measuring apparatus, AOR-200, manufactured by Oak Seisakusho was used. [0042] JP, Free format text: 4453939, Country of ref document: the Radiation Sensitivity of Fluorine-Doped JAPANESE INTERMEDIATE CODE: A01, Free format text: Furthermore, in order to make the fluorine concentration distribution according to claim 2 0.002 mol% or less, in the invention according to claim 6, the transparent glass body obtained by the transparent vitrification step is heated and softened in a machine. Actually, F glass having a wavelength of 157 nm is added to silica glass containing 10 ppm or more of OH groups.2When the excimer laser was irradiated, formation of NBOHC with a strong 260 nm absorption peak was confirmed simultaneously with the generation of the E ′ center with a 215 nm absorption peak. Transmittance) T0The internal transmittance TiIs calculated. [0050] Hereinafter, the present invention will be described in detail with reference to the embodiments shown in the drawings. It is. The isotropic chemical shift of the ¹⁹F spectrum shows that fluorine bonds only to silicon; there is no evidence of oxyfluorides. From the data shown in FIG.4In Example 1 in which fluorine doping treatment was performed in a gas atmosphere, OH group concentration was less than 1 ppm, fluorine concentration was 1.8 mol%, and thermal and mechanical homogenization treatment was performed, the transmittance at 157 nm was good, Moreover, the transmittance | permeability fall after laser irradiation was not seen, but the silica glass excellent in the homogeneity was obtained. On the other hand, when the temperature is above 1300 ° C., contamination due to diffusion of impurities from the furnace material becomes a problem. [0036] created with the It is characterized by comprising a fourth step of carrying out a thermal annealing treatment in which the cooling rate is kept at 5 ° C./hour or less and the end point of the slow cooling is 600 ° C. TIN and a-Si were used in both dry and immersion ArF DP processes. It is argued that the isolated ≡SiOH was converted into the hydrogen bonded ≡SiOH by irradiation of the Xe2* band emission. 2) Fluorine concentration 5 Gas injection nozzle In samples containing significant OH, no structure at energies lower than the fundamental edge is observed. ?_100ppm OH. [0024] And in the case of the said process, although the heat processing temperature at the time of a fluorine dope process changes a little with the magnitude | size and bulk of the porous base material to be processed, about 800 to 1300 degreeC is preferable. B. das Bohren extrem feiner Düsen für Tintenstrahldrucker). [0056] However, when the temperature is below 800 ° C., the porous base material is not sufficiently doped with fluorine, and the processing takes too much time. Two types of hard mask (HM), i.e. 2020-08-07 03:09 PM (PDT). Visitez notre page de contacts et mettez-vous en relation avec l’un de nos sites mondiaux. JP4453939B2 - Optical silica glass member for F2 excimer laser transmission and manufacturing method thereof - Google Patents Optical ... excimer laser fluorine treatment step Prior art date 1999-09-16 Legal status (The legal status is an assumption and is not a legal conclusion. EX50 F2 Excimer Laser ; EX50 F2 Excimer Laser . NOTE: It may take up to 10 min to receive the registration verification link. 4) Measurement of refractive index distribution Therefore, the homogenization method described in JP-A-7-267661, for example, which does not use a refractory furnace is preferable. In addition to the near-edge absorption, changes in the intensity, peak position and the shape of the infrared absorption bands due to a bond-stretching mode of ≡SiOH s at 3673 cm-1 (2.72 μm) and the first overtone of these stretching vibrations at 7230 cm-1 (1.38 μm) were monitored. The term “excimer” is an abbreviation of the expression excited dimer, and denotes a molecule RH* in the excited state, E 1, which does not exist in the ground state, E 0 (Fig. To form a porous base material 1. Preferred format for this abstract (see Preferences) Find Similar Abstracts: Use: Authors Title Abstract Text Return: Query Results Return items starting with number Query Form Database: Astronomy Physics arXiv e-prints, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Influence of the Manufacturing Process on The double patterning process consists of two HM litho-shrink-etch steps. In general, in order to have practical stability as an optical material, the F of the present invention is used.2Excimer laser at 10 mJ / cm per pulse2After the 3E + 5 pulse irradiation, the transmittance decrease at a wavelength of 157 nm is required to be 5 points or less per 10 mm thickness. That is, it is possible to simultaneously achieve the generation of oxygen deficiency defects by the presence of oxygen gas while sufficiently removing Si—OH with an atmosphere gas containing chlorine. R = (n-1)2/ (N + 1)2 OH group concentration, fluorine concentration, birefringence measured at a wavelength of 633 nm, striae, F2FIG. Moreover, since the cooling rate after annealing was increased as compared with Example 1, the amount of birefringence was increased. PAYMENT UNTIL: 20140212.

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